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High-end acceleration sensors (HEB)

Jun 3, 2024

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As part of the “HEB” research project, new very high-resolution capacitive MEMS acceleration sensors with a resolution of 0.001⁰ were developed at the CiS Research Institute. They are suitable for inclination and leveling measurements as well as condition monitoring.

The basis was formed by concepts from the high-end application area with a focus on the use of chip-level process steps.

The HEB individual sensors were first joined at chip level. The opposing chips are pressed together using a fine placer so that the metal structures of the spring-mass or carrier chips (Si or glass) are connected using Au-Stud bumps and the distances are set to approx. 5.6 µm.

The sensors are characterized by an increased seismic mass, a laterally arranged differential capacitor and a hermetic package. Demonstrator setups show good agreement with the simulated results.

Konrad-Zuse-Str. 14

99099 Erfurt

Germany

+49 361 66314-10

+49 361 66314-13

https://www.cismst.de

info@cismst.de

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