Product news
High-end acceleration sensors (HEB)
Jun 3, 2024
As part of the “HEB” research project, new very high-resolution capacitive MEMS acceleration sensors with a resolution of 0.001⁰ were developed at the CiS Research Institute. They are suitable for inclination and leveling measurements as well as condition monitoring.
The basis was formed by concepts from the high-end application area with a focus on the use of chip-level process steps.
The HEB individual sensors were first joined at chip level. The opposing chips are pressed together using a fine placer so that the metal structures of the spring-mass or carrier chips (Si or glass) are connected using Au-Stud bumps and the distances are set to approx. 5.6 µm.
The sensors are characterized by an increased seismic mass, a laterally arranged differential capacitor and a hermetic package. Demonstrator setups show good agreement with the simulated results.